Effect of the Growth Interruption on the Surface Morphology and Crystalline Quality of MOCVD-Grown h-BN

Hexagonal boron nitride (h-BN) is one promising material class for applications in DUV optoelectronics due to the layered structure and ultra-wide bandgap. The synthesis of h-BN with smooth surface morphology high quality on dielectric substrates key construct efficient functional devices thereon. In this study, we reported wafer-scale c-plane sapphire by metal organic chemical vapor deposition utilizing flow modulation epitaxy (FME) growth interruptions. effect interruption location within FME crystalline films was systematically investigated. after TEB injection could promote mobility B adatoms, NH3 further relieve passivation N terminal fronts mitigate parasitic gas-phase reaction between precursors. By simultaneously employing interruptions injections, rate increased significantly from 0.16 nm/min 4.76 nm/min, roughness 2-nm-thick reduced 0.587 nm. addition, grown an solely presented best crystallinity because relatively slow possibility impurity incorporation.